SAMSUNG SSD2009ATF.

#SSD2009ATF. SAMSUNG SSD2009ATF. New Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8, SSD2009ATF. pictures, SSD2009ATF. price, #SSD2009ATF. supplier

Manufacturer Part Number: SSD2009ATF
Rohs Code: No
Part Life Cycle Code: Obsolete
Ihs Manufacturer: FAIRCHILD SEMICONDUCTOR CORP
Part Package Code: SOT
Package Description: SMALL OUTLINE, R-PDSO-G8
Pin Count: 8
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: Fairchild Semiconductor Corporation
Risk Rank: 8.23
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 50 V
Drain Current-Max (ID): 3 A
Drain-source ON Resistance-Max: 0.13 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PDSO-G8
JESD-609 Code: e0
Moisture Sensitivity Level: 1
Number of Elements: 2
Number of Terminals: 8
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 10 A
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Finish: TIN LEAD
Terminal Form: GULL WING
Terminal Position: DUAL
Time
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8