SAMSUNG K4S283233F-MN1L

#K4S283233F-MN1L SAMSUNG K4S283233F-MN1L New Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, FBGA-90, K4S283233F-MN1L pictures, K4S283233F-MN1L price, #K4S283233F-MN1L supplier

Manufacturer Part Number: K4S283233F-MN1L
Rohs Code: No
Part Life Cycle Code: Obsolete
Ihs Manufacturer: SAMSUNG SEMICONDUCTOR INC
Part Package Code: BGA
Package Description: FBGA-90
Pin Count: 90
ECCN Code: EAR99
HTS Code: 8542.32.00.02
Manufacturer: Samsung Semiconductor
Risk Rank: 5.87
Access Mode: FOUR BANK PAGE BURST
Access Time-Max: 6 ns
Additional Feature: AUTO/SELF REFRESH
Clock Frequency-Max (fCLK): 105 MHz
I/O Type: COMMON
Interleaved Burst Length: 1,2,4,8
JESD-30 Code: R-PBGA-B90
JESD-609 Code: e0
Length: 13 mm
Memory Density: 134217728 bit
Memory IC Type: SYNCHRONOUS DRAM
Memory Width: 32
Number of Functions: 1
Number of Ports: 1
Number of Terminals: 90
Number of Words: 4194304 words
Number of Words Code: 4000000
Operating Mode: SYNCHRONOUS
Operating Temperature-Max: 85 °C
Operating Temperature-Min: -25 °C
Organization: 4MX32
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Code: LFBGA
Package Equivalence Code: BGA90,9X15,32
Package Shape: RECTANGULAR
Package Style: GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Cel): 240
Power Supplies: 3/3.3 V
Qualification Status: Not Qualified
Refresh Cycles: 4096
Seated Height-Max: 1.45 mm
Sequential Burst Length: 1,2,4,8,FP
Standby Current-Max: 0.002 A
Subcategory: DRAMs
Supply Current-Max: 0.21 mA
Supply Voltage-Max (Vsup): 3.6 V
Supply Voltage-Min (Vsup): 2.7 V
Supply Voltage-Nom (Vsup): 3 V
Surface Mount: YES
Technology: CMOS
Temperature Grade: OTHER
Terminal Finish: Tin/Lead (Sn/Pb)
Terminal Form: BALL
Terminal Pitch: 0.8 mm
Terminal Position: BOTTOM
Time
Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, FBGA-90