Panasonic Electronic Components – Semiconductor Products UNR421L00A

Datasheets:UNR421L00A View all SpecificationsProduct Photos:NS-B1Catalog Drawings:NS-B1 Type SideNS-B1 Type FrontStandard Package:5,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) – Single, Pre-BiasedSeries:-Packaging:Tape & Box (TB)Transistor Type:NPN – Pre-BiasedCurrent – Collector (Ic) (Max):100mAVoltage – Collector Emitter Breakdown (Max):50VResistor – Base (R1) (Ohms):4.7kResistor – Emitter Base (R2) (Ohms):4.7kDC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent – Collector Cutoff (Max):500nAFrequency – Transition:150MHzPower – Max:300mWMounting Type:Through HolePackage / Case:NS-B1Supplier Device Package:NS-B1Other Names:UNR421L00ATB #UNR421L00A Panasonic Electronic Components – Semiconductor Products UNR421L00A New TRANS PREBIAS NPN 300MW NS-B1, UNR421L00A pictures, UNR421L00A price, #UNR421L00A supplier

TRANS PREBIAS NPN 300MW NS-B1