ON Semiconductor NVTFS4C08N

#NVTFS4C08N ON Semiconductor NVTFS4C08N New Single N-Channel Power MOSFET 30V, 55A, 5.9mΩ, WDFN8 3.3×3.3, 0.65P, 1500-REEL, NVTFS4C08N pictures, NVTFS4C08N price, #NVTFS4C08N supplier

METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: S-PDSO-F5
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 5
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 175 °C
Operating Temperature-Min: -55 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: SQUARE
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 31 W
Pulsed Drain Current-Max (IDM): 253 A
Reference Standard: AEC-Q101
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin (Sn)
Terminal Form: FLAT
Terminal Position: DUAL
Transistor Element Material: SILICON
Single N-Channel Power MOSFET 30V, 55A, 5.9mΩ, WDFN8 3.3×3.3, 0.65P, 1500-REEL