ON Semiconductor NSVMMUN2232LT1G

Datasheets:MUN(2,5)232, MMUN2232L, DTC143Exx, NSBC143EF3Product Photos:SOT-23-3_527AGStandard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) – Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN – Pre-BiasedCurrent – Collector (Ic) (Max):100mAVoltage – Collector Emitter Breakdown (Max):50VResistor – Base (R1) (Ohms):4.7kResistor – Emitter Base (R2) (Ohms):4.7kDC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mACurrent – Collector Cutoff (Max):500nAFrequency – Transition:-Power – Max:246mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:SOT-23-3 #NSVMMUN2232LT1G ON Semiconductor NSVMMUN2232LT1G New NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL, NSVMMUN2232LT1G pictures, NSVMMUN2232LT1G price, #NSVMMUN2232LT1G supplier

Manufacturer Part Number: NSVMMUN2232LT1G
Brand Name: ON Semiconductor
Pbfree Code: Active
Ihs Manufacturer: ON SEMICONDUCTOR
Pin Count: 3
Manufacturer Package Code: 318-08
ECCN Code: EAR99
Manufacturer: ON Semiconductor
Risk Rank: 1.49
Collector Current-Max (IC): 0.1 A
DC Current Gain-Min (hFE): 15
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 1
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: NPN
Power Dissipation-Max (Abs): 0.4 W
Subcategory: BIP General Purpose Small Signal
Surface Mount: YES
Terminal Finish: Tin (Sn)
Time
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL