NXP Semiconductors PDTD113ZS,126

Datasheets:PDTD113Z SeriesProduct Photos:TO-92-3(StandardBody),TO-226_straightleadStandard Package:2,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) – Single, Pre-BiasedSeries:-Packaging:Tape & Box (TB)Transistor Type:NPN – Pre-BiasedCurrent – Collector (Ic) (Max):500mAVoltage – Collector Emitter Breakdown (Max):50VResistor – Base (R1) (Ohms):1kResistor – Emitter Base (R2) (Ohms):10kDC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 50mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mACurrent – Collector Cutoff (Max):500nAFrequency – Transition:-Power – Max:500mWMounting Type:Through HolePackage / Case:TO-226-3, TO-92-3 (TO-226AA) Formed LeadsSupplier Device Package:TO-92-3Other Names:934059145126PDTD113ZS AMOPDTD113ZS AMO-ND #PDTD113ZS,126 NXP Semiconductors PDTD113ZS,126 New TRANS PREBIAS NPN 500MW TO92-3, PDTD113ZS,126 pictures, PDTD113ZS,126 price, #PDTD113ZS,126 supplier

TRANS PREBIAS NPN 500MW TO92-3