NXP Semiconductors PBRN123EK,115

Datasheets:PBRN123E SeriesProduct Photos:SOT-23-3Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) – Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN – Pre-BiasedCurrent – Collector (Ic) (Max):600mAVoltage – Collector Emitter Breakdown (Max):40VResistor – Base (R1) (Ohms):2.2kResistor – Emitter Base (R2) (Ohms):2.2kDC Current Gain (hFE) (Min) @ Ic, Vce:280 @ 300mA, 5VVce Saturation (Max) @ Ib, Ic:1.15V @ 8mA, 800mACurrent – Collector Cutoff (Max):500nAFrequency – Transition:-Power – Max:250mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:SMT3Other Names:934058958115PBRN123EK T/RPBRN123EK T/R-ND #PBRN123EK,115 NXP Semiconductors PBRN123EK,115 New TRANS PREBIAS NPN 250MW SMT3, PBRN123EK,115 pictures, PBRN123EK,115 price, #PBRN123EK,115 supplier

TRANS PREBIAS NPN 250MW SMT3