Microsemi Power Products Group APTGT100A602G

Datasheets:APTGT100A602GStandard Package:1Category:Discrete Semiconductor ProductsFamily:IGBTs – ModulesSeries:-IGBT Type:Trench and Field StopConfiguration:Half BridgeVoltage – Collector Emitter Breakdown (Max):600VVce(ON) (Max) @ Vge, Ic:1.9V @ 15V, 100ACurrent – Collector (Ic) (Max):150ACurrent – Collector Cutoff (Max):50µAInput Capacitance (Cies) @ Vce:6.1nF @ 25VPower – Max:340WInput:StandardNTC Thermistor:NoMounting Type:Through HolePackage / Case:SP2Supplier Device Package:SP2 #APTGT100A602G Microsemi Power Products Group APTGT100A602G New Insulated Gate Bipolar Transistor,, APTGT100A602G pictures, APTGT100A602G price, #APTGT100A602G supplier

Manufacturer Part Number: APTGT100A602G
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: MICROSEMI CORP
ECCN Code: EAR99
Manufacturer: Microsemi Corporation
Risk Rank: 5.84
Peak Reflow Temperature (Cel): NOT SPECIFIED
Time
Insulated Gate Bipolar Transistor,