MDmesh MOSFETs deliver higher power density

STMicroelectronics has unveiled its new STPOWER MDmesh M9 and DM9 N-channel super-junction, multi-drain, silicon power mosfets, targeting SMPS in applications such as data-center servers, 5G infrastructure, and flat-panel televisions. The first devices launched are the 650-V STP65N045M9 and 600-V STP60N043DM9. Both offer very low ON-resistance (RDS(on)) per unit area, resulting in higher power density and smaller system sizes.

MDmesh MOSFETs deliver higher power densityST said each device offers the best maximum RDS(on) in its category, at 45 mΩ for the STP65N045M9 and 43 mΩ for the STP60N043DM9. With very low gate charge (Qg), typically 80 nC at 400-V drain voltage, these devices have the best RDS(on) max Qg figure of merit currently available, said the company.

The gate threshold Voltage (VGS(th)), typically 3.7 V for the STP65N045M9 and 4.0 V for the STP60N043DM9, minimizes both turn-on and turn-off switching losses compared with the previous MDmesh M5 and M6/DM6 devices. They also feature a very low reverse recovery charge (Qrr) and reverse recovery time (trr), which further contribute to improved efficiency and switching performance.

In addition, ST’s latest high-voltage MDmesh technologies features an additional platinum diffusion process that is said to ensure a fast intrinsic body diode. The peak diode-recovery slope (dv/dt) is greater than earlier processes. All MDmesh DM9 devices can withstand dv/dt up to 120 V/ns at 400 V.

The MDmesh M9 and DM9 devices, the STP65N045M9 and STP60N043DM9, both in a TO-220 power package, are in production and will be available at distributors by the end of Q2 2022. Additional standard surface-mount and through-hole package options will be added later in 2022.

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