IXYS MMIX1X200N60B3H1

Datasheets:MMIX1X200N60B3H1Standard Package:20Category:Discrete Semiconductor ProductsFamily:IGBTs – SingleSeries:GenX3™Packaging:TubeIGBT Type:-Voltage – Collector Emitter Breakdown (Max):600VVce(ON) (Max) @ Vge, Ic:1.7V @ 15V, 100ACurrent – Collector (Ic) (Max):175ACurrent – Collector Pulsed (Icm):1000APower – Max:520WSwitching Energy:2.85mJ (on), 2.9mJ (off)Input Type:StandardGate Charge:315nCTd (on/off) @ 25°C:48ns/160nsTest Condition:360V, 100A, 1 Ohm, 15VReverse Recovery Time (trr):100nsPackage / Case:24-BESOP (0.906″, 23.00mm Width) 21 Leads, Exposed PadMounting Type:Surface MountSupplier Device Package:24-SMPDDynamic Catalog:Standard IGBTs #MMIX1X200N60B3H1 IXYS MMIX1X200N60B3H1 New Insulated Gate Bipolar Transistor,, MMIX1X200N60B3H1 pictures, MMIX1X200N60B3H1 price, #MMIX1X200N60B3H1 supplier

Manufacturer Part Number: MMIX1X200N60B3H1
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: IXYS CORP
Manufacturer: IXYS Corporation
Risk Rank: 2.22
Insulated Gate Bipolar Transistor,