Datasheets:IXGH56N60B3D1Standard Package:30Category:Discrete Semiconductor ProductsFamily:IGBTs – SingleSeries:GenX3™Packaging:TubeIGBT Type:PTVoltage – Collector Emitter Breakdown (Max):600VVce(ON) (Max) @ Vge, Ic:1.8V @ 15V, 44ACurrent – Collector (Ic) (Max):-Current – Collector Pulsed (Icm):350APower – Max:330WSwitching Energy:1.3mJ (on), 1.05mJ (off)Input Type:StandardGate Charge:138nCTd (on/off) @ 25°C:26ns/150nsTest Condition:480V, 44A, 5 Ohm, 15VReverse Recovery Time (trr):100nsPackage / Case:TO-247-3Mounting Type:Through HoleSupplier Device Package:TO-247 #IXGH56N60B3D1 IXYS IXGH56N60B3D1 New Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3, IXGH56N60B3D1 pictures, IXGH56N60B3D1 price, #IXGH56N60B3D1 supplier

Manufacturer Part Number: IXGH56N60B3D1
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: IXYS CORP
Part Package Code: TO-247
Package Description: FLANGE MOUNT, R-PSFM-T3
Pin Count: 3
Manufacturer: IXYS Corporation
Risk Rank: 5.63
Additional Feature: LOW CONDUCTION LOSS
Case Connection: COLLECTOR
Collector Current-Max (IC): 56 A
Collector-Emitter Voltage-Max: 600 V
Fall Time-Max (tf): 165 ns
Gate-Emitter Thr Voltage-Max: 5 V
Gate-Emitter Voltage-Max: 20 V
JEDEC-95 Code: TO-247
JESD-30 Code: R-PSFM-T3
JESD-609 Code: e1
Number of Elements: 1
Number of Terminals: 3
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 330 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3