IR IRLZ34S

#IRLZ34S IR IRLZ34S New Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3, IRLZ34S pictures, IRLZ34S price, #IRLZ34S supplier

Manufacturer Part Number: IRLZ34S
Part Life Cycle Code: Obsolete
Ihs Manufacturer: VISHAY SILICONIX
Part Package Code: D2PAK
Package Description: SMALL OUTLINE, R-PSSO-G2
Pin Count: 4
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 5.09
Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas): 128 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 60 V
Drain Current-Max (ID): 30 A
Drain-source ON Resistance-Max: 0.05 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-263AB
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e0
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 110 A
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Finish: TIN LEAD
Terminal Form: GULL WING
Terminal Position: SINGLE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3