IR IRFIZ34A

#IRFIZ34A IR IRFIZ34A New Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3, IRFIZ34A pictures, IRFIZ34A price, #IRFIZ34A supplier

Manufacturer Part Number: IRFIZ34A
Part Life Cycle Code: Obsolete
Ihs Manufacturer: SAMSUNG SEMICONDUCTOR INC
Package Description: IN-LINE, R-PSIP-T3
Pin Count: 3
ECCN Code: EAR99
Manufacturer: Samsung Semiconductor
Risk Rank: 5.58
Avalanche Energy Rating (Eas): 463 mJ
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 60 V
Drain Current-Max (Abs) (ID): 30 A
Drain Current-Max (ID): 30 A
Drain-source ON Resistance-Max: 0.04 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PSIP-T3
Number of Elements: 1
Number of Terminals: 3
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 175 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: IN-LINE
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 77 W
Pulsed Drain Current-Max (IDM): 120 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: NO
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3