#IRF9630STRR IR IRF9630STRR New Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3, IRF9630STRR pictures, IRF9630STRR price, #IRF9630STRR supplier
Manufacturer Part Number: IRF9630STRR
Part Life Cycle Code: Obsolete
Ihs Manufacturer: VISHAY SILICONIX
Part Package Code: D2PAK
Package Description: SMALL OUTLINE, R-PSSO-G2
Pin Count: 4
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 5.05
Additional Feature: AVALANCHE RATED
Avalanche Energy Rating (Eas): 500 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 200 V
Drain Current-Max (ID): 6.5 A
Drain-source ON Resistance-Max: 0.8 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-263AB
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e0
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: P-CHANNEL
Pulsed Drain Current-Max (IDM): 26 A
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Finish: TIN LEAD
Terminal Form: GULL WING
Terminal Position: SINGLE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3
Part Life Cycle Code: Obsolete
Ihs Manufacturer: VISHAY SILICONIX
Part Package Code: D2PAK
Package Description: SMALL OUTLINE, R-PSSO-G2
Pin Count: 4
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 5.05
Additional Feature: AVALANCHE RATED
Avalanche Energy Rating (Eas): 500 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 200 V
Drain Current-Max (ID): 6.5 A
Drain-source ON Resistance-Max: 0.8 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-263AB
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e0
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: P-CHANNEL
Pulsed Drain Current-Max (IDM): 26 A
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Finish: TIN LEAD
Terminal Form: GULL WING
Terminal Position: SINGLE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3