#IRF7488 IR IRF7488 New Power Field-Effect Transistor, 6.3A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8, IRF7488 pictures, IRF7488 price, #IRF7488 supplier
Manufacturer Part Number: IRF7488
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: Infineon TECHNOLOGIES AG
Package Description: SMALL OUTLINE, R-PDSO-G8
Manufacturer: Infineon Technologies AG
Risk Rank: 5.83
Avalanche Energy Rating (Eas): 96 mJ
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 80 V
Drain Current-Max (ID): 6.3 A
Drain-source ON Resistance-Max: 0.029 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: MS-012AA
JESD-30 Code: R-PDSO-G8
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 8
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 50 A
Surface Mount: YES
Terminal Finish: NOT SPECIFIED
Terminal Form: GULL WING
Terminal Position: DUAL
Time
Power Field-Effect Transistor, 6.3A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: Infineon TECHNOLOGIES AG
Package Description: SMALL OUTLINE, R-PDSO-G8
Manufacturer: Infineon Technologies AG
Risk Rank: 5.83
Avalanche Energy Rating (Eas): 96 mJ
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 80 V
Drain Current-Max (ID): 6.3 A
Drain-source ON Resistance-Max: 0.029 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: MS-012AA
JESD-30 Code: R-PDSO-G8
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 8
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 50 A
Surface Mount: YES
Terminal Finish: NOT SPECIFIED
Terminal Form: GULL WING
Terminal Position: DUAL
Time
Power Field-Effect Transistor, 6.3A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8