International Rectifier IRG7PH35UDPBF

Datasheets:IRG7PH35UDPbF/UD-EPProduct Photos:TO-247-3Product Training ModulesIGBT Primer Device and ApplicationsHigh Voltage Integrated Circuits (HVIC Gate Drivers)PCN Assembly/Origin:IGBT Backend Wafer Processing 23/Oct/2013IGBT Wafer Fab Change 08/Nov/2013Standard Package:25Category:Discrete Semiconductor ProductsFamily:IGBTs – SingleSeries:-Packaging:TubeIGBT Type:TrenchVoltage – Collector Emitter Breakdown (Max):1200VVce(ON) (Max) @ Vge, Ic:2.2V @ 15V, 20ACurrent – Collector (Ic) (Max):50ACurrent – Collector Pulsed (Icm):60APower – Max:180WSwitching Energy:1680µJInput Type:StandardGate Charge:85nCTd (on/off) @ 25°C:30ns/160nsTest Condition:600V, 20A, 10 Ohm, 15VReverse Recovery Time (trr):105nsPackage / Case:TO-247-3Mounting Type:Through HoleSupplier Device Package:TO-247ACDynamic Catalog:Standard IGBTs #IRG7PH35UDPBF International Rectifier IRG7PH35UDPBF New Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3, IRG7PH35UDPBF pictures, IRG7PH35UDPBF price, #IRG7PH35UDPBF supplier

Manufacturer Part Number: IRG7PH35UDPBF
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: Infineon TECHNOLOGIES AG
Package Description: FLANGE MOUNT, R-PSFM-T3
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 1.4
Case Connection: COLLECTOR
Collector Current-Max (IC): 50 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf): 105 ns
Gate-Emitter Thr Voltage-Max: 6 V
Gate-Emitter Voltage-Max: 30 V
JEDEC-95 Code: TO-247AC
JESD-30 Code: R-PSFM-T3
Number of Elements: 1
Number of Terminals: 3
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 180 W
Qualification Status: Not Qualified
Rise Time-Max (tr): 30 ns
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Time
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3