Datasheets:BSB028N06NN3 GProduct Photos:BSF030NE2LQStandard Package:5,000Category:Discrete Semiconductor ProductsFamily:FETs – SingleSeries:OptiMOS™Packaging:Tape & Reel (TR)FET Type:MOSFET N-Channel, Metal OxideFET Feature:Logic Level GateDrain to Source Voltage (Vdss):60VCurrent – Continuous Drain (Id) @ 25° C:22A (Ta), 90A (Tc)Rds ON (Max) @ Id, Vgs:2.8 mOhm @ 30A, 10VVgs(th) (Max) @ Id:4V @ 102µAGate Charge (Qg) @ Vgs:143nC @ 10VInput Capacitance (Ciss) @ Vds:12000pF @ 30VPower – Max:78WMounting Type:Surface MountPackage / Case:3-WDSONSupplier Device Package:MG-WDSON-2, CanPAK M™Dynamic Catalog:N-Channel Logic Level Gate FETsOther Names:BSB028N06NN3 G-NDBSB028N06NN3GBSB028N06NN3GXUMA1SP000605956 #BSB028N06NN3 G Infineon Technologies BSB028N06NN3 G New MOSFET N-CH 60V 22A WDSON-2, BSB028N06NN3 G pictures, BSB028N06NN3 G price, #BSB028N06NN3 G supplier
MOSFET N-CH 60V 22A WDSON-2