INFINEON SPW17N80C3A

#SPW17N80C3A Infineon SPW17N80C3A New Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Rohs COMPLIANT, PLASTIC PACKAGE-3, SPW17N80C3A pictures, SPW17N80C3A price, #SPW17N80C3A supplier

Manufacturer Part Number: SPW17N80C3A
Part Life Cycle Code: Active
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Package Description: FLANGE MOUNT, R-PSFM-T3
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.74
Additional Feature: AVALANCHE RATED, HIGH Voltage
Avalanche Energy Rating (Eas): 670 mJ
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 800 V
Drain Current-Max (ID): 17 A
Drain-source ON Resistance-Max: 0.29 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-247
JESD-30 Code: R-PSFM-T3
Number of Elements: 1
Number of Terminals: 3
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 51 A
Surface Mount: NO
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3