INFINEON IPD60R520C6

#IPD60R520C6 Infineon IPD60R520C6 New Power Field-Effect Transistor, 8.1A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3, IPD60R520C6 pictures, IPD60R520C6 price, #IPD60R520C6 supplier

Manufacturer Part Number: IPD60R520C6
Pbfree Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Part Package Code: TO-252
Package Description: SMALL OUTLINE, R-PSSO-G2
Pin Count: 4
Manufacturer: Infineon Technologies AG
Risk Rank: 5.78
Avalanche Energy Rating (Eas): 153 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 600 V
Drain Current-Max (Abs) (ID): 8.1 A
Drain Current-Max (ID): 8.1 A
Drain-source ON Resistance-Max: 0.52 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-252
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 66 W
Pulsed Drain Current-Max (IDM): 22 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN
Terminal Form: GULL WING
Terminal Position: SINGLE
Time
Power Field-Effect Transistor, 8.1A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3