Infineon BSC077N12NS3

#BSC077N12NS3 Infineon BSC077N12NS3 New Power Field-Effect Transistor, 13.4A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8, BSC077N12NS3 pictures, BSC077N12NS3 price, #BSC077N12NS3 supplier

Manufacturer Part Number: BSC077N12NS3GATMA1
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Package Description: SMALL OUTLINE, R-PDSO-F5
Pin Count: 8
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 1.67
Avalanche Energy Rating (Eas): 330 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 120 V
Drain Current-Max (ID): 13.4 A
Drain-source ON Resistance-Max: 0.0077 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PDSO-F5
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 5
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 392 A
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Finish: Tin (Sn)
Terminal Form: FLAT
Terminal Position: DUAL
Time
Power Field-Effect Transistor, 13.4A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8