#BCW61FF Infineon BCW61FF New Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-236, BCW61FF pictures, BCW61FF price, #BCW61FF supplier
Manufacturer Part Number: BCW61FF
Rohs Code: No
Part Life Cycle Code: Transferred
Ihs Manufacturer: SIEMENS A G
Package Description: SMALL OUTLINE, R-PDSO-G3
ECCN Code: EAR99
HTS Code: 8541.21.00.75
Manufacturer: Siemens
Risk Rank: 5.31
Additional Feature: LOW NOISE
Collector Current-Max (IC): 0.1 A
Collector-Emitter Voltage-Max: 32 V
Configuration: SINGLE
DC Current Gain-Min (hFE): 100
JEDEC-95 Code: TO-236
JESD-30 Code: R-PDSO-G3
JESD-609 Code: e0
Number of Elements: 1
Number of Terminals: 3
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: PNP
Power Dissipation Ambient-Max: 0.33 W
Power Dissipation-Max (Abs): 0.31 W
Qualification Status: Not Qualified
Subcategory: Other Transistors
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
Terminal Form: GULL WING
Terminal Position: DUAL
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Transition Frequency-Nom (fT): 250 MHz
VCEsat-Max: 0.55 V
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
Rohs Code: No
Part Life Cycle Code: Transferred
Ihs Manufacturer: SIEMENS A G
Package Description: SMALL OUTLINE, R-PDSO-G3
ECCN Code: EAR99
HTS Code: 8541.21.00.75
Manufacturer: Siemens
Risk Rank: 5.31
Additional Feature: LOW NOISE
Collector Current-Max (IC): 0.1 A
Collector-Emitter Voltage-Max: 32 V
Configuration: SINGLE
DC Current Gain-Min (hFE): 100
JEDEC-95 Code: TO-236
JESD-30 Code: R-PDSO-G3
JESD-609 Code: e0
Number of Elements: 1
Number of Terminals: 3
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: PNP
Power Dissipation Ambient-Max: 0.33 W
Power Dissipation-Max (Abs): 0.31 W
Qualification Status: Not Qualified
Subcategory: Other Transistors
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
Terminal Form: GULL WING
Terminal Position: DUAL
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Transition Frequency-Nom (fT): 250 MHz
VCEsat-Max: 0.55 V
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-236