GeneSiC Semiconductor MBR30035CTR

Datasheets:MBR30020CT thru MBR30040CTRTwin Tower Pkg DrawingProduct Photos:MBR30035CTRStandard Package:25Category:Discrete Semiconductor ProductsFamily:Diodes, Rectifiers – ModulesSeries:-Packaging:BulkVoltage – Forward (Vf) (Max) @ If:650mV @ 150ACurrent – Reverse Leakage @ Vr:8mA @ 20VCurrent – Average Rectified (Io) (per Diode):200A (DC)Voltage – DC Reverse (Vr) (Max):35VReverse Recovery Time (trr):-Diode Type:Schottky, Reverse PolaritySpeed:Fast Recovery =< 500ns, > 200mA (Io)Diode Configuration:-Mounting Type:Chassis MountPackage / Case:Twin TowerSupplier Device Package:Twin TowerDynamic Catalog:MBR(H, T) SeriesOther Names:1242-1089 #MBR30035CTR GeneSiC Semiconductor MBR30035CTR New Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 35V V(RRM), Silicon,, MBR30035CTR pictures, MBR30035CTR price, #MBR30035CTR supplier

Manufacturer Part Number: MBR30035CTR
Rohs Code: Yes
Part Life Cycle Code: Contact Manufacturer
Ihs Manufacturer: GENESIC SEMICONDUCTOR INC
Package Description: R-PUFM-X2
ECCN Code: EAR99
HTS Code: 8541.10.00.80
Manufacturer: GeneSic Semiconductor Inc
Risk Rank: 5.38
Application: POWER
Case Connection: ANODE
Configuration: COMMON ANODE, 2 ELEMENTS
Diode Element Material: SILICON
Diode Type: RECTIFIER DIODE
Forward Voltage-Max (VF): 0.65 V
JESD-30 Code: R-PUFM-X2
Non-rep Pk Forward Current-Max: 2500 A
Number of Elements: 2
Number of Phases: 1
Number of Terminals: 2
Operating Temperature-Max: 175 °C
Operating Temperature-Min: -40 °C
Output Current-Max: 150 A
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Rep Pk Reverse Voltage-Max: 35 V
Reverse Current-Max: 8000 µA
Surface Mount: NO
Technology: SCHOTTKY
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 35V V(RRM), Silicon,