Fairchild Semiconductor 2N7000_D75Z

Datasheets:2N7000/02, NDS7002A DatasheetProduct Photos:TO-92-3(StandardBody),TO-226_straightleadProduct Training ModulesHigh Voltage Switches for Power ProcessingStandard Package:2,000Category:Discrete Semiconductor ProductsFamily:FETs – SingleSeries:-Packaging:Tape & Box (TB)FET Type:MOSFET N-Channel, Metal OxideFET Feature:StandardDrain to Source Voltage (Vdss):60VCurrent – Continuous Drain (Id) @ 25° C:200mARds ON (Max) @ Id, Vgs:5 Ohm @ 500mA, 10VVgs(th) (Max) @ Id:3V @ 1mAGate Charge (Qg) @ Vgs:-Input Capacitance (Ciss) @ Vds:50pF @ 25VPower – Max:400mWMounting Type:Through HolePackage / Case:TO-226-3, TO-92-3 (TO-226AA) Formed LeadsSupplier Device Package:TO-92-3Dynamic Catalog:N-Channel Logic Level Gate FETsOther Names:2N7000_D75Z-ND2N7000_D75ZFSTB2N7000_D75ZTB2N7000_D75ZTB-ND2N7000D75Z #2N7000_D75Z Fairchild Semiconductor 2N7000_D75Z New Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 2N7000_D75Z pictures, 2N7000_D75Z price, #2N7000_D75Z supplier

Manufacturer Part Number: 2N7000_D75Z
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: ON SEMICONDUCTOR
Package Description: CYLINDRICAL, O-PBCY-T3
ECCN Code: EAR99
HTS Code: 8541.21.00.95
Manufacturer: ON Semiconductor
Risk Rank: 5
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 60 V
Drain Current-Max (Abs) (ID): 0.2 A
Drain Current-Max (ID): 0.2 A
Drain-source On Resistance-Max: 5 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss): 5 pF
JEDEC-95 Code: TO-92
JESD-30 Code: O-PBCY-T3
Number of Elements: 1
Number of Terminals: 3
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: ROUND
Package Style: CYLINDRICAL
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 0.4 W
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: NO
Terminal Form: THROUGH-HOLE
Terminal Position: BOTTOM
Time
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92