#EMFA0P02J Excelliance MOS Corporation EMFA0P02J New Power Field-Effect Transistor, 3.4A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,, EMFA0P02J pictures, EMFA0P02J price, #EMFA0P02J supplier
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PDSO-G3
Number of Elements: 1
Number of Terminals: 3
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Min: -55 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: P-CHANNEL
Pulsed Drain Current-Max (IDM): 14 A
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: DUAL
Transistor Element Material: SILICON
Power Field-Effect Transistor, 3.4A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
JESD-30 Code: R-PDSO-G3
Number of Elements: 1
Number of Terminals: 3
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Min: -55 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: P-CHANNEL
Pulsed Drain Current-Max (IDM): 14 A
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: DUAL
Transistor Element Material: SILICON
Power Field-Effect Transistor, 3.4A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,