EPC launches rad-hard 100-V GaN FET

Efficient Power Conversion (EPC) has expanded its family of radiation-hardened (rad-hard) gallium nitride (GaN) products with the introduction of a rad-hard 100-V GaN Transistor for critical spaceborne and other high-reliability applications. EPC claims the new EPC7018 rad-hard GaN FET delivers the lowest ON-resistance with an RDSon of 3.9 mΩ.

EPC launches rad-hard 100-V GaN FET

(Source: EPC)

Compared with silicon solutions, the GaN devices offer higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and very low on-resistance, enabling higher switching frequencies that result in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions, said EPC. They also support higher total radiation levels and SEE LET levels than silicon solutions.

Delivering a pulsed ID of 345 A, the EPC7018 offers a total dose radiation rating of greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). Applications include DC/DC power, motor drives, LiDAR, deep probes, and ion thrusters for space applications, satellites, and avionics.

The GaN FET is housed in a small footprint of 13.9 mm2 and is offered in a chip-scale package, along with EPC’s rad-family, EPC7014, EPC7007, and EPC 7019. Packaged versions will be available from EPC Space. The operating temperature range is -55°C to 150°C.

Engineering samples of The EPC7018 are available now, and will be followed by volume production in December 2022. Click here for the datasheet.

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