Diodes Corporation recently launched a space-saving, high thermal efficiency TOLL (PowerDI®1012-8) package, can operate at 175°C, 100 watt class DMTH10H1M7STLWQ and DMTH10H2M5STLWQ. In addition, 80 watt class DMTH8001STLWQ metal oxide semiconductor field effect Transistor (MOSFET) occupies less of the PCB area than TO263 twenty. The feature of the product is that the template outside the profile is only 2.4 mm thick. This feature makes the product the best choice for high-reliability power product applications, such as energy heat recovery, integrated starter alternators, and DC-DC converters for electric vehicles.
The TOLL package adopts a strip-bonded package to achieve low package resistance and low parasitic inductance, so that DMTH8001STLWQ, DMTH10H1M7STLWQ and DMTH10H2M5STLWQ can generate typical pin-through resistances of 1.3mΩ, 1.4mΩ and 1.68mΩ under a 10 W gate driver. In addition, low parasitic inductance can improve the performance of EMI Circuits.
Since the welding area is 50% higher than that of TO263, the TOLL package can make the junction thermal impedance reach 0.65°C/W, and the mosfet can handle currents up to 270A. Tin-plated lead ingots with trapezoidal grooves facilitate the automated optical inspection (AOI) process. Metal Oxide Semiconductor Field Effect Transistors (mosfets) are all compliant with AEC-Q101 grade specifications, are manufactured by IATF 16949 certified facilities, and support PPAP documents.