Bourns, Inc. has entered the insulated-gate bipolar Transistor (IGBT) market with its first high-efficiency 600-V/650-V discrete products co-packaged with a fast recovery diode (FRD). The five new Model BID Series discrete devices are based ON advanced trench-gate field-stop technology that is said to provide greater control of dynamic characteristics.
Other advantages cited include a positive temperature coefficient that helps increase device longevity and reduce power requirements in high voltage and high current designs.
Although there are a variety of competitors that offer IGBTs based on advanced trench-gate field-stop technology, “Bourns is entering the market with a strong, very technologically competitive and power efficient first offering,” said Jennifer Joseph, Semiconductor product line manager for Bourns circuit Protection Division.
“The IGBT market is expected to have strong growth featuring a CAGR [from] 2020-2026 of 7.5% due to its cost advantage, [according to Yole Group 2021], despite the proliferation of SiC mosfets and GaN solutions,” she added.
In addition to the market growth, the new IGBT product line is expected to give the company even stronger positions with its power application customers. The new products also will enhance the company’s cross-selling synergies with Bourns’ Magnetics products, Joseph said, which are already established in applications such as solar inverters and uninterruptible power sources (UPS) as well as switching power applications.
The Bourns Circuit Protection Division is repositioning to focus on advanced power protection solutions that meet the needs of increasingly complex and sensitive power electronics design requirements in higher power, remote access, or critical infrastructure applications, said Joseph.
Product availability was another issue.
“In developing Bourns’ ‘Pivot to Power’ strategy, we saw a distinct market need for shorter lead times of robust, highly reliable IGBTs,” she added.
Bourns is quoting 20-24 week lead times for its IGBTs. This is in comparison to industry lead times of 30-50 weeks for these device types.
The Bourns Model BID Series of discrete IGBTs claim to offer lower collector-emitter saturation Voltage (VCE(sat)) and lower switching losses compared to previous generation non-punch-through IGBTs. The series offers four voltage/current model options in 600 V/5 A, 600 V/20 A, 600 V/30 A and 650 V/50 A. The operating temperature range is –55 °C to 150 °C.
These devices can provide a lower thermal resistance Rth(j-c), thanks to their thermally-efficient TO-252, TO-247 and TO-247N packages. This makes the IGBTs suited for switch-mode power supplies (SMPS), UPS, induction heating and power factor correction (PFC) applications.
The Model BID series discrete IGBTs have been tested and qualified according to JEDEC standards for power switching products. They are Rohs compliant and halogen free.