Avago Technologies US Inc. ATF-331M4-BLK

Datasheets:ATF-331M4Product Photos:0505 (1412 Metric) MiniPak 1412PCN Design/Specification:Platform Ceramic 12/Mar/2013Standard Package:100Category:Discrete Semiconductor ProductsFamily:RF FETsSeries:-Packaging:BulkTransistor Type:pHEMT FETFrequency:2GHzGain:15dBVoltage – Test:4VCurrent Rating:305mANoise Figure:0.6dBCurrent – Test:60mAPower – Output:19dBmVoltage – Rated:5.5VPackage / Case:0505 (1412 Metric)Supplier Device Package:MiniPak 1412 #ATF-331M4-BLK Avago Technologies US Inc. ATF-331M4-BLK New RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 X 1.20 MM, 0.70 MM HEIGHT, MINIPAK-4, ATF-331M4-BLK pictures, ATF-331M4-BLK price, #ATF-331M4-BLK supplier

Manufacturer Part Number: ATF-331M4-BLK
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: BROADCOM LTD
Package Description: SMALL OUTLINE, R-MDSO-N4
ECCN Code: EAR99
HTS Code: 8541.21.00.40
Manufacturer: Broadcom Limited
Risk Rank: 8.05
Additional Feature: LOW NOISE
Configuration: SINGLE
DS Breakdown Voltage-Min: 5.5 V
FET Technology: HIGH ELECTRON MOBILITY
Highest Frequency Band: X BAND
JESD-30 Code: R-MDSO-N4
JESD-609 Code: e4
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 4
Operating Mode: DEPLETION MODE
Operating Temperature-Max: 160 °C
Package Body Material: METAL
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Power Dissipation Ambient-Max: 0.4 W
Power Gain-Min (Gp): 13.5 dB
Qualification Status: Not Qualified
Subcategory: FET RF Small Signal
Surface Mount: YES
Terminal Finish: GOLD
Terminal Form: NO LEAD
Terminal Position: DUAL
Time
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 X 1.20 MM, 0.70 MM HEIGHT, MINIPAK-4