#ATF-521P8-BLKG AVAGO ATF-521P8-BLKG New RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8, ATF-521P8-BLKG pictures, ATF-521P8-BLKG price, #ATF-521P8-BLKG supplier
Manufacturer Part Number: ATF-521P8-BLKG
Part Life Cycle Code: Transferred
Ihs Manufacturer: AGILENT TECHNOLOGIES INC
Part Package Code: SON
Package Description: SMALL OUTLINE, S-PDSO-N8
Pin Count: 8
ECCN Code: EAR99
Manufacturer: Agilent Technologies Inc
Risk Rank: 5.11
Additional Feature: LOW NOISE
Case Connection: SOURCE
Configuration: SINGLE
DS Breakdown Voltage-Min: 7 V
Drain Current-Max (ID): 0.5 A
FET Technology: HIGH ELECTRON MOBILITY
Highest Frequency Band: C BAND
JEDEC-95 Code: MO-229
JESD-30 Code: S-PDSO-N8
Number of Elements: 1
Number of Terminals: 8
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: SQUARE
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Power Gain-Min (Gp): 15.5 dB
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Form: NO LEAD
Terminal Position: DUAL
Transistor Application: Amplifier
Transistor Element Material: SILICON
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
Part Life Cycle Code: Transferred
Ihs Manufacturer: AGILENT TECHNOLOGIES INC
Part Package Code: SON
Package Description: SMALL OUTLINE, S-PDSO-N8
Pin Count: 8
ECCN Code: EAR99
Manufacturer: Agilent Technologies Inc
Risk Rank: 5.11
Additional Feature: LOW NOISE
Case Connection: SOURCE
Configuration: SINGLE
DS Breakdown Voltage-Min: 7 V
Drain Current-Max (ID): 0.5 A
FET Technology: HIGH ELECTRON MOBILITY
Highest Frequency Band: C BAND
JEDEC-95 Code: MO-229
JESD-30 Code: S-PDSO-N8
Number of Elements: 1
Number of Terminals: 8
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: SQUARE
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Power Gain-Min (Gp): 15.5 dB
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Form: NO LEAD
Terminal Position: DUAL
Transistor Application: Amplifier
Transistor Element Material: SILICON
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8